Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films

Thin Solid Films

Volumn 517, Issue 2, 2008, Pages 691-694

  Schenck, P K ^a   Klamo, J L ^a   Bassim, N D ^a   Burke, P G ^a   Gerbig, Y B ^a   Green, M L ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Combinatorial; High k dielectrics; Nanoindentation; Reflectometry; Thin films; X ray diffraction

Indexed keywords

CHARACTERIZATION; CONFORMAL MAPPING; DIELECTRIC MATERIALS; GROWTH (MATERIALS); HAFNIUM; HAFNIUM COMPOUNDS; MATERIALS; MATERIALS PROPERTIES; NANOINDENTATION; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; THICK FILMS; THIN FILMS; THROUGHPUT; X RAY ANALYSIS; YTTRIUM; YTTRIUM ALLOYS; YTTRIUM OXIDE;

AMORPHOUS; BOUNDARY LINES; COMBINATORIAL; COMBINATORIAL LIBRARIES; COMBINATORIAL STUDIES; COMBINATORIAL TECHNIQUES; CRYSTALLINITY; END-MEMBERS; HAFNIUM OXIDES; HIGH-K DIELECTRICS; OPTICAL; PHASE FORMATIONS; POWERFUL TOOLS; PULSED LASERS; RAY ANALYSES; REFLECTOMETRY; SYSTEM USING; X-RAY DIFFRACTION;

MECHANICAL PROPERTIES;

EID: 55049090505     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.001     Document Type: Article

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