Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 16-19

  Ishiyama, T ^a   Nagase, M ^b   Omura, Y ^c  

^a NTT Advance Technology Corporation   (Japan)

^b NTT Basic Research Laboratories   (Japan)

^c KANSAI UNIVERSITY   (Japan)

Author keywords

AFM; Annealing; Interface; Scaling analysis; SIMOX; Step terrace

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE OPERATIONS; SILICA; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS;

STEP-TERRACE STRUCTURES;

INTERFACES (MATERIALS);

EID: 0037042079     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00834-0     Document Type: Article

References (12)