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Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

Strain relaxation in epitaxial (Pb,Sr) TiO3 thin films on NdGaO3 substrates

(7) Lin, Y a Dai, C a Li, Y R a,f Chen, X b Chen, C L b,c Bhalla, A d Jia, Q X e

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

b University of Houston (United States)

c UNIVERSITY OF TEXAS AT SAN ANTONIO (United States)

d The University of Texas at San Antonio (United States)

e LOS ALAMOS NATIONAL LABORATORY (United States)

f Diodes FabTech Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING PROCESS; COOLING RATES; DISLOCATION DENSITIES; DISLOCATION EVOLUTION; HIGH RESOLUTION X RAY DIFFRACTION; INTERFACIAL STRAIN; POST-DEPOSITION; TIO;

DIELECTRIC PROPERTIES; LEAD; STRAIN CONTROL; STRAIN RELAXATION; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

STRAIN RATE;

EID: 77949728390 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3357435 Document Type: Article

Times cited : (19)

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