Structural evolution of dislocation half-loops in epitaxial BaTiO 3 thin films during high-temperature annealing

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1967-1969

  Sun, H P ^a   Pan, X Q ^a   Haeni, J H ^b   Schlom, D G ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LATTICE MISMATCH; SUBSTRATE INTERFACES; THERMAL ANNEALING; THREADING DISLOCATIONS;

ANNEALING; ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; STRAIN CONTROL; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 5444227586     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789233     Document Type: Article

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