Experimental study and modeling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7317-7327

  Tchakarov, S ^a   Roca i Cabarrocas, P ^a   Dutta, U ^b   Chatterjee, P ^b   Equer, B ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; CURRENT DENSITY; DEFECTS; ELECTRIC POTENTIAL; ELECTRONS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS;

DEFECT DENSITY; POLYMORPHOUS SILICON; REVERSE-BIAS DARK CURRENTS;

SEMICONDUCTOR DIODES;

EID: 0346896543     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1624482     Document Type: Article

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