Effect of CoWP capping layers on dielectric breakdown of SiO2

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2007, Pages 59-64

  Gambino, Jeff ^a   Chen, Fen ^a   Mongeon, Steve ^a   Meatyard, Dave ^a   Lee, Tom ^a   Lee, B ^b,c   Bamnolker, H ^b   Hall, Laurie ^b,c   Li, Nanhai ^b,c   Hernandez, M ^b   Little, P ^b,c   Hamed, M ^b   Ivanov, Igor ^b  

^a IBM MICROELECTRONICS   (United States)

^b Blue29   (United States)

^c LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIMODAL BEHAVIOR; INTERCONNECT STRUCTURES; PLASMA CLEAN;

ELECTRIC BREAKDOWN; LEAKAGE CURRENTS;

SILICA;

EID: 39749147812     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2007.4378058     Document Type: Conference Paper

References (18)