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Crystal Research and Technology

Volumn 36, Issue 8-10, 2001, Pages 851-858

Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals: A promising substrate for GaN epitaxial growth

(5) Sakowska, H a Swirkowicz, M a Mazur, K a Lukasiewicz, T a Witek, A b

a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors (Poland)

b INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

(La,Sr)(Al,Ta)O3 crystals; Czochralski growth; GaN; Substrate material

Indexed keywords

CAPACITANCE; COMPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT TRANSMISSION; PEROVSKITE; STOICHIOMETRY; THERMAL EFFECTS; THERMAL EXPANSION;

MACROSCOPIC DEFECTS;

SINGLE CRYSTALS;

EID: 0035166391 PISSN: 02321300 EISSN: None Source Type: Journal
DOI: 10.1002/1521-4079(200110)36:8/10<851::AID-CRAT851>3.0.CO;2-N Document Type: Conference Paper

Times cited : (20)

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