Electrical conduction mechanisms in natively doped ZnO nanowires (II)

Nanotechnology

Volumn 21, Issue 14, 2010, Pages

  Tsai, Lin Tzung ^a   Chiu, Shao Pin ^a   Lu, Jia Grace ^b   Lin, Juhn Jong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT PROCESS; DOPED ZNO; ELECTRICAL CONDUCTION MECHANISMS; ELECTRICAL RESISTIVITY; FOCUSED ION BEAM TECHNIQUE; FOUR-PROBE; HOPPING CONDUCTION; NEAREST-NEIGHBORS; SINGLE-CRYSTALLINE; TEMPERATURE BEHAVIOR; THERMAL ACTIVATION; THERMAL CHEMICAL VAPOR DEPOSITION; THERMAL EVAPORATION METHOD; ZNO NANOWIRES; ZNO NWS;

ACTIVATION ANALYSIS; ELECTRIC WIRE; ELECTRODES; LITHOGRAPHY; NANOTECHNOLOGY; NANOWIRES; PLATINUM; PROBES; ZINC OXIDE;

THERMAL EVAPORATION;

EID: 77949560914     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/14/145202     Document Type: Article

References (26)

1. Ozgür, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
2. Janotti A and Van de Walle C G 2009 Rep. Prog. Phys. 72 126501
3. McCluskey M D and Jokela S J 2009 J. Appl. Phys. 106 071101
4. Schlenker E, Bakin A, Weimann T, Hinze P, Weber D H, Gölzhäuser A, Wehmann H H and Waag A 2008 Nanotechnology 19 365707
5. Heo Y W, Tien L C, Norton D P, Kang B S, Ren F, Gila B P and Pearton S J 2004 Appl. Phys. Lett. 85 2002
6. Hu Y, Liu Y, Li W, Gao M, Liang X, Li Q and Peng L M 2009 Adv. Funct. Mater. 19 2380
7. Mott N F and Davis E A 1979 Electronic Processes in Non-Crystalline Materials (Oxford: Clarendon)
8. Chang P C and Lu J G 2008 Appl. Phys. Lett. 92 212113
9. Shklovskii B I and Efros A L 1984 Electronic Properties of Doped Semiconductors (New York: Springer)
10. Ma Y J, Zhang Z, Zhou F, Lu L, Jin A and Gu C 2005 Nanotechnology 16 746
11. Chiu S P, Lin Y H and Lin J J 2009 Nanotechnology 20 015203
12. Lin Y F, Jian W B, Wang C P, Suen Y W, Wu Z Y, Chen F R, Kai J J and Lin J J 2007 Appl. Phys. Lett. 90 223117
13. Chang P C, Chien C J, Stichtenoth D, Ronning C and Lu J G 2007 Appl. Phys. Lett. 90 113101
14. He J H, Chang P H, Chen C Y and Tsai K T 2009 Nanotechnology 20 135701
15. Mott N F and Twose W D 1961 Adv. Phys. 10 107
16. Ellmer K 2001 J. Phys. D: Appl. Phys. 34 3097
17. Reuss F, Frank S, Kirchner C, Kling R, Gruber Th and Waag A 2005 Appl. Phys. Lett. 87 112104
18. Baxter J B and Schmuttenmaer C A 2006 J. Phys. Chem. B 110 25229
19. Tampo H, Yamada A, Fons P, Shibata H, Matsubara K, Iwata K, Niki S, Nakahara K and Takasu H 2004 Appl. Phys. Lett. 84 4412
20. Mott N F 1993 Conduction in Non-Crystalline Materials (Oxford: Clarendon)
21. Mott N F and Davis E A 1968 Phil. Mag. 17 1269
22. Norton P 1976 Phys. Rev. Lett. 37 164
23. Lin J J and Giordano N 1987 Phys. Rev. B 35 545
24. Washburn S and Webb R A 1986 Adv. Phys. 35 375
25. Altshuler B L, Aronov A G and Spivak B Z 1981 JETP Lett. 33 94
26. Tsurumi T, Nishizawa S, Ohashi N and Ohgaki T 1999 Japan. J. Appl. Phys. 38 3682