Effects of structure, temperature, and strain rate on mechanical properties of SiGe nanotubes

Journal of Physical Chemistry C

Volumn 114, Issue 10, 2010, Pages 4309-4316

  Liu, Xin ^a   Cao, Dapeng ^a   Yu, Aiping ^b  

^a BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

^b UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM ARRANGEMENT; ATOMIC ARRANGEMENT; CLASSICAL MOLECULAR DYNAMICS; CRITICAL STRAINS; CRITICAL STRUCTURES; EFFECTS OF TEMPERATURE AND STRAIN RATE; ELECTROMECHANICAL PROPERTY; ELECTRONIC DEVICE; HIGHER TEMPERATURES; INITIAL STRUCTURES; POTENTIAL APPLICATIONS; SIMULATION RESULT; STRUCTURAL TRANSFORMATION; TENSILE STRUCTURES; TRANSITION STATE THEORIES; TUBE DIAMETERS; YOUNG'S MODULUS; ZIG-ZAG NANOTUBES; ZIGZAG STRUCTURE;

CHIRALITY; ELASTIC MODULI; ELASTICITY; ELECTROMECHANICAL DEVICES; ENANTIOMERS; MECHANICAL PROPERTIES; MOLECULAR DYNAMICS; NANOTUBES; SILICON ALLOYS; STEREOCHEMISTRY; STRUCTURAL PROPERTIES; TENSILE STRENGTH; VIBRATIONS (MECHANICAL);

STRAIN RATE;

EID: 77949472171     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp910423k     Document Type: Article

References (64)

1. Dalton, A.; Collins, S.; Razal, J. J. Mater. Chem. 2004, 14, 1.
2. Lau, K.; Hui, D. Composites, Part B 2002, 33, 263.
3. Qian, D.; Dickey, E.; Andrews, R.; Rantell, T. Appl. Phys. Lett. 2000, 76, 2868.
4. Cumings, J.; Aettl, A. Chem. Phys. Lett. 2000, 316, 211.
5. Rathi, S.; Ray, A. K. Nanotechnology 2008, 19, 335706.
6. Goldberger, J.; He, R.; Zhang, Y.; Lee, S.; Yan, H.; Chol, H.; Yang, P. Nature 2003, 422, 599.
7. Cote, M.; Cohen, M.; Chadi, D. J. Phys. Rev. B 1998, 58, 4277.
8. Hacohen, Y.; Grunbaum, E.; Tenne, R.; Sloan, J.; Hutchison, J. Nature 1998, 395, 336.
9. Hacohen, Y.; Popovia-Biro, R.; Grunbaum, E.; Prior, Y.; Tenne, R. Adv. Mater. 2002, 14, 1075.
10. Wu, X.; Xu, Z.; Zeng, X. Nano Lett. 2007, 7, 2987.
11. Alam, K. M.; Ray, A. K. Phys. Rev. B 2008, 77, 035436.
12. Alam, K. M.; Ray, A. K. Nanotechnology 2007, 18, 495706.
13. Barnard, A. S.; Russo, S. J. Phys. Chem. B 2003, 107, 7577.
14. Schmidt, O. G.; Eberl, K. Nature 2001, 410, 168.
15. Wang, N.; Tang, Y.; Zhang, Y.; Lee, S. C.; Lee, S. T. Phys. Rev. B 1998, 58, R16024.
16. Jeng, Y.; Tsai, P.; Fang, T. Phys. Rev. B 2005, 71, 085411.
17. Durgun, E.; Tongay, S.; Ciraci, S. Phys. Rev. B 2005, 72, 075420.
18. Hu, J.; Yang, M.; Yang, P.; Lieber, C. Nature 1999, 399, 48.
19. Margulis, L.; Salitra, G.; Tenne, R.; Tallanker, M. Nature 1993, 365, 113.
20. Rathi, S.; Ray, A. K. J. Comput. Theor. Nanosci. 2008, 5, 464.
21. Seifert, G.; Kohler, T.; Hajnal, Z.; Frauenheim, T. Solid State Commun. 2001, 119, 653.
22. Hartmann, J. M.; Burdin, M.; Rolland, G.; Billon, T. J. Cryst. Growth 2006, 294, 288.
23. Rastelli, A.; Kanel, H. V. Surf. Sci. 2003, 532, 769.
24. Zang, J.; Huang, M.; Liu, F. Phys. Rev. B 2007, 98, 146102.
25. Rathi, S.; Ray, A. K. Chem. Phys. Lett. 2008, 19, 79.
26. Liu, X.; Cheng, D. J.; Cao, D. P. Nanotechnology 2009, 20, 315705.
27. Musin, R. N.; Wang, X. O. Phys. Rev. B 2006, 74, 165308.
28. Musin, R. N.; Wang, X. O. Phys. Rev. B 2005, 71, 155318.
29. Srivastava, D.; Menon, M.; Cho, K. Phys. Rev. Lett. 1999, 83, 2973.
30. Wong, E. W.; Sheehan, P. E.; Lieber, C. M. Science 1997, 277, 1971.
31. Yakobson, B. I.; Barbec, C.; Bernholc, J. Phys. Rev. Lett. 1996, 76, 2411.
32. Treacy, M. M. J.; Ebbsen, T. W.; Gibson, J. M. Nature 1996, 381, 678.
33. Ruoff, R. S.; Lorents, D. C. 1995, 33, 925.
34. Kang, J. W.; Hwang, H. J. Nanotechnology 2003, 14, 402.
35. Baumeier, B.; Kruger, P.; Pollmann, J. Phys. Rev. B 2007, 76, 085407.
36. Moon, W. H.; Ham, J. K.; Hwang, H. J. Nonatech 2003, 3, 158.
37. Tersoff, J. Phys. Rev. B 1988, 38, 9902.
38. Tersoff, J. Phys. Rev. B 1988, 37, 6991.
39. Zhang, Y.; Huang, H. Comput. Mater. Sci. 2008, 10, 1016.
40. Tang, M. J.; Yip, S. Phys. Rev. B 1995, 52, 15150.
41. Robertson, D. H.; Brenner, D. W.; Mintmire, J. W. Phys. Rev. B 1992, 45, 12592.
42. Quitoriano, N. J.; Belov, M.; Evoy, S.; Kamins, T. I. Nano Lett. 2009, 9, 1511.
43. Zhang, K.; Stock, G. M.; Zhong, J. Nanotechnology 2007, 18, 285703.
44. Liu, X. W.; Hu, J.; Pan, B. C. Physica E 2008, 40, 3042.
45. Tersoff, J. Phys. Rev. B 1989, 39, 5566.
46. Zhang, J.; Yuan, Q.; Wang, F.; Zhao, Y. Comput. Mater. Sci. 2009, 46, 621.
47. Yao, Z.; Zhu, C.; Cheng, M.; Liu, J. Comput. Mater. Sci. 2001, 180.
48. http://lammps.sandia.gov/doc/Section-intro.html#1-5; Plimpton, S. J. J. Comput. Phys. 1995, 117, 1.
49. Palaria, A.; Klimeck, G.; Strachan, A. Phys. Rev. B 2008, 78, 205315.
50. Wu, Y.; Huang, M.; Wang, F.; Huang, X.; Rosenblatt, S.; Huang, L.; Yan, H.; Brien, S.; Hone, J.; Heinz, T. Nano Lett. 2008, 8, 4158.
51. Perisanu, S.; Gouttenoire, V.; Vincent, P.; Ayari, A.; Choueib, M.; Bechelany, M.; Cornu, D.; Purcell, S. T. Phys. Rev. B 2008, 77, 165434.
52. Wei, C.; Cho, K.; Srivastava, D. Phys. Rev. B 2003, 67, 115407.
53. Yu, M. F.; Files, B. S.; Arepalli, S.; Ruoff, R. S. Phys. Rev. Lett. 2000, 84, 5552.
54. Walters, D. A. Appl. Phys. Lett. 1999, 74, 3803.
55. De Crescenzi, M.; Castrucci, P.; Scarcelli, M.; Diociauti, M.; Chaudhari, P. S.; Balasubramanian, C.; Bhave, T. M.; Bhoraskar, S. V. Appl. Phys. Lett. 2005, 86, 231901.
56. Harris, G. L. Properties of Silicon Carbide; Institution of Electrical Engineers: London, 1995.
57. Zhao, Q.; Nardelli, M. B.; Bernholc, J. Phys. Rev. B 2002, 65, 144105.
58. Zhang, P.; Lammert, P. E.; Crespi, V. Phys. Rev. Lett. 1998, 81, 5346.
59. Nardelli, M. B.; Yakobson, B. I.; Bernholc, J. Phys. Rev. Lett. 1998, 81, 4656.
60. Lu, J. P. Phys. Rev. Lett. 1999, 79, 1297.
61. Xu, Z.; Wang, F.; Zheng, Q. Small 2008, 4, 733.
62. Ozaki, T.; Iwasa, Y.; Mitani, T. Phys. Rev. Lett. 2000, 83, 1712.
63. Zhang, C. L.; Shen, H. S. Appl. Phys. Lett. 2006, 89, 081904.
64. Wortman, J. J. J. Appl. Phys. 1965, 36, 153.