Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages

  Chu, Byung Hwan ^a   Lin, Hon Way ^b   Gwo, Shangjr ^b   Wang, Yu Lin ^c   Pearton, S J ^c   Johnson, J W ^d   Rajagopal, P ^d   Roberts, J C ^d   Piner, E L ^d   Linthicuni, K J ^d   Ren, Fan ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c UNIVERSITY OF FLORIDA   (United States)

^d NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ANION COORDINATION; CHLORIDE ION CONCENTRATION; CHLORIDE IONS; EXHALED BREATH CONDENSATE; FIXED SURFACES; GLUCOSE MONITORING; INN THIN FILMS; REAL TIME; REMOTE SENSING APPLICATIONS; WIRELESS DATA TRANSMISSION;

CHLORINE COMPOUNDS; DATA COMMUNICATION SYSTEMS; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; GLUCOSE; GLUCOSE SENSORS; INFORMATION THEORY; NEGATIVE IONS; REMOTE SENSING; TELECOMMUNICATION EQUIPMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949421758     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3271253     Document Type: Conference Paper

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