Validation of the compatibility between a porous silicon-based gas sensor technology and standard microelectronic process

IEEE Sensors Journal

Volumn 10, Issue 4, 2010, Pages 893-899

  Barillaro, G ^a   Bruschi, P ^a   Lazzerini, G M ^a   Strambini, L M ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

CMOS compatibility; Gas sensors; Porous silicon

Indexed keywords

ANALOG CELLS; CMOS-COMPATIBILITY; ELECTRICAL MEASUREMENT; ELECTRICAL PARAMETER; ELECTRONIC CIRCUITS; GAS SENSOR TECHNOLOGY; GAS SENSORS; MICROELECTRONIC PROCESS; POROUS SILICON FORMATION; POST PROCESSING; POST-PROCESSING PROCEDURE; SILICON ANODIZATION; TEST CHIPS;

CHEMICAL SENSORS; CMOS INTEGRATED CIRCUITS; ELECTRON TUBES; GAS DETECTORS; GASES; MICROELECTRONIC PROCESSING; MICROELECTRONICS;

POROUS SILICON;

EID: 77949397975     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2009.2034861     Document Type: Article

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