P +-n diodes with a lateral porous layer as gas sensors

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 5, 2007, Pages 1399-1403

  Barillaro, G ^a   Diligenti, A ^a   Strambini, L M ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC BEHAVIOR; ISOPROPANOL VAPORS; POROUS FILM; POROUS LAYER;

ADSORPTION; BAND STRUCTURE; CHEMICAL SENSORS; CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; POROUS MATERIALS; VAPORS;

DIODES;

EID: 34547218070     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674365     Document Type: Article

References (6)

1. M. Tucci, V. La Ferrara, M. Della Noce, E. Massera, and L. Quercia, J. Non-Crystalline Solids 338-340, 776 (2004).
2. G. Barillaro, P. Bruschi, F. Pieri, and L. M. Strambini, submitted to phys. stat. sol.
3. G. Barillaro, A. Diligenti, A. Nannini, L. M. Strambini, E. Comini, G. Sberveglieri, IEEE Sens. J. 6, 19 (2006).
4. G. Barillaro, A. Nannini, and F. Pieri, Sens. Actuators B 93, 263 (2003).
5. A. S. Grove, Physics and Technology of Semiconductor Devices (John Wiley & Sons, New York, 1967), p. 289.
6. G. Barillaro, A. Diligenti, G. Marola, and L. M. Strambini, Sens. Actuators B 105, 278 (2005).