Impact of photocapacitance on phase response of GaN/sapphire SAW UV sensor

IEEE Sensors Journal

Volumn 10, Issue 4, 2010, Pages 883-887

  Chivukula, Venkata S ^a   Čiplys, Daumantas ^a,b   Rimeika, Romualdas ^b   Shur, Michael S ^a   Yang, Jinwei ^c   Gaska, Remis ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b VILNIUS UNIVERSITY   (Lithuania)

^c Sensor Electronic Technology   (United States)

Author keywords

Gallium nitride; Photocapacitance; Surface acoustic wave (SAW) sensor; Ultraviolet (UV) sensor

Indexed keywords

PHOTOCAPACITANCE; SURFACE ACOUSTIC WAVE SENSORS; ULTRA-VIOLET; ULTRAVIOLET (UV) SENSOR;

ACOUSTIC IMPEDANCE; ACOUSTIC WAVES; ACOUSTICS; ACOUSTOELECTRIC EFFECTS; ELECTRIC CURRENTS; GALLIUM ALLOYS; GALLIUM NITRIDE; IRRADIATION; SENSORS; ULTRASONIC TRANSDUCERS;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 77949362896     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2009.2036936     Document Type: Article

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