GaN-based SAW delay-line oscillator

Electronics Letters

Volumn 37, Issue 8, 2001, Pages 545-546

  Ciplys, D ^a   Rimeika, R ^a   Sereika, A ^b   Gaska, R ^a,d   Shur, M S ^a,d   Yang, J W ^c   Khan, M A ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b VILNIUS UNIVERSITY   (Lithuania)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

^d SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC TRANSDUCERS; ACOUSTIC WAVE VELOCITY; GALLIUM NITRIDE; OSCILLATIONS; SAPPHIRE; TEMPERATURE; ULTRAVIOLET RADIATION;

OSCILLATION FREQUENCY; SURFACE ACOUSTIC WAVE DELAY LINE OSCILLATOR; ULTRAVIOLET SENSOR;

OSCILLATORS (ELECTRONIC);

EID: 0035848681     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010358     Document Type: Article

References (4)

1. O'CLOCK, G.D., and DUFFY, M.T.: 'Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire', Appl. Phys. Lett., 1973, 23, pp. 55-56
2. KHAN, M.A., RIMEIKA, R., CIPLYS, D., GASKA, R., and SHUR, M.S.: 'Optical guided modes and surface acoustic waves in GaN grown on (0001) sapphire substrates', Phys. Stat. Sol (b), 1999, 216, pp. 477-480
3. 1-xN thin films obtained by surface acoustic-wave measurements', Appl. Phys. Lett., 1998, 72, pp. 2400-2402
4. MAINES, J.D., PAIGE, E.G.S., SAUNDERS, A.F., and YOUNG, A.S.: 'Simple technique for the accurate determination of delay-time variations in acoustic-surface-wave structures', Electron. Lett., 1969, 26, pp. 678-680