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Angewandte Chemie - International Edition

Volumn 49, Issue 10, 2010, Pages 1782-1785

Facile chemical solution deposition of high-mobility epitaxial germanium films on silicon

(8) Zou, Guifu a Luo, Hongmei b Ronning, Filip a Sun, Baoquan c McCleskey, Thomas M a Burrell, Anthony K a Bauer, Eve a Jia, Q X a

a LOS ALAMOS NATIONAL LABORATORY (United States)

b New Mexico State University (United States)

c SOOCHOW UNIVERSITY (China)

Author keywords

Germanium; Mobility; Solution deposition; Thin films

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; CHEMICAL SOLUTION DEPOSITION METHOD; GERMANIUM FILMS; HIGH MOBILITY; MOBILITY; MOBILITY SOLUTIONS; ROOM TEMPERATURE; SILICON SUBSTRATES; SOLUTION DEPOSITION;

CARRIER CONCENTRATION; CHEMICALS; DEPOSITION; EPITAXIAL FILMS; GALVANOMAGNETIC EFFECTS; GERMANIUM; HALL MOBILITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77749335440 PISSN: 14337851 EISSN: 15213773 Source Type: Journal
DOI: 10.1002/anie.200905804 Document Type: Article

Times cited : (18)

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