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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3243-3246

Reversible resistive switching in Bi4Ti3O 12 thin films deposited by electron cyclotron resonance sputtering

(3) Jin, Yoshito a Sarai, Hideaki a,b Shimada, Masaru a

Author keywords

Bismuth titanate; Electron cyclotron resonance sputter deposition; High resistance state; Low resistance state; Reversible resistive switching; Stack capacitance structure

Indexed keywords

BISMUTH COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; SPUTTERING; THIN FILMS;

BISMUTH TITANATE; ELECTRON CYCLOTRON RESONANCE SPUTTER DEPOSITION; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; REVERSIBLE RESISTIVE SWITCHING; STACK CAPACITANCE STRUCTURE;

SWITCHING;

EID: 33646932965 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.3243 Document Type: Article

Times cited : (7)

References (11)

1
- 0000748226
- S. Q. Liu, N. J. Wu and A. Ignativ: Appl. Phys. Lett. 76 (2000) 2749.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2749
- Liu, S.Q.¹ Wu, N.J.² Ignativ, A.³

2
- 0001331485
- A. Beck, J. G. Bendnorz, Ch. Gerber, C. Rossel and D. Widmer: Appl. Phys. Lett. 77 (2000) 139.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 139
- Beck, A.¹ Bendnorz, J.G.² Gerber, Ch.³ Rossel, C.⁴ Widmer, D.⁵

3
- 0035806023
- Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck and S. J. Wind: Appl. Phys. Lett. 78 (2001) 3738.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3738
- Watanabe, Y.¹ Bednorz, J.G.² Bietsch, A.³ Gerber, Ch.⁴ Widmer, D.⁵ Beck, A.⁶ Wind, S.J.⁷

4
- 33646910680
- C. Rossel, G. I. Meijer, D. Brémaud and D. Widmer: Appl. Phys. Lett. 78 (2001) 3738.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3738
- Rossel, C.¹ Meijer, G.I.² Brémaud, D.³ Widmer, D.⁴

5
- 19944434155
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, K. Yoo, I. S. Byuu, J.-S. Kim, J. S. Choi and B. H. Park: Appl. Phys. Lett. 85 (2004) 5655.
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5655
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.-S.⁵ Joung, Y.S.⁶ Yoo, K.⁷ Byuu, I.S.⁸ Kim, J.-S.⁹ Choi, J.S.¹⁰ Park, B.H.¹¹

6
- 0042378349
- A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue and C. W. Chu: Appl. Phys. Lett. 83 (2003) 957.
- (2003) Appl. Phys. Lett. , vol.83 , pp. 957
- Baikalov, A.¹ Wang, Y.Q.² Shen, B.³ Lorenz, B.⁴ Tsui, S.⁵ Sun, Y.Y.⁶ Xue, Y.Y.⁷ Chu, C.W.⁸

7
- 84967802571
- T. Ono, H. Nishimura, M. Shimada and S. Matsuo: J. Vac. Sci. Technol. A 12 (1994) 1281.
- (1994) J. Vac. Sci. Technol. A , vol.12 , pp. 1281
- Ono, T.¹ Nishimura, H.² Shimada, M.³ Matsuo, S.⁴

8
- 0038794826
- Y. Jin, K. Saito, M. Shimada and T. Ono: J. Vac. Sci. Technol. B 21 (2003) 942.
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 942
- Jin, Y.¹ Saito, K.² Shimada, M.³ Ono, T.⁴

9
- 31344464929
- Y. Jin, K. Saito, M. Shimada and T. Ono: J. Vac. Sci. Technol. B 23 (2005) 1480.
- (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 1480
- Jin, Y.¹ Saito, K.² Shimada, M.³ Ono, T.⁴

10
- 0032155453
- M. Yamaguchi and T. Nagatomo: Jpn. J. Appl. Phys. 37 (1998) 5166.
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 5166
- Yamaguchi, M.¹ Nagatomo, T.²

11
- 10044237971
- A. Sawa, T. Fujii, M. Kawasaki and Y. Tokura: Appl. Phys. Lett. 85 (2004) 4073.
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4073
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

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