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Volumn 107, Issue 4, 2010, Pages

Damage free laser ablation of SiO2 for local contact opening on silicon solar cells using an a-Si:H buffer layer

Author keywords

[No Author keywords available]

Indexed keywords

532 NM LASER; A-SI:H; A-SPOTS; ABLATION THRESHOLDS; CHEMICAL VAPOR DEPOSITED; CONTACT OPENING; CRYSTALLINE SI; CRYSTALLINE SILICONS; CZ SILICON; DAMAGE-FREE; DIELECTRIC LAYER; DIODE-PUMPED; FLUENCES; GAUSSIANS; HIGH-EFFICIENCY SOLAR CELLS; IRRADIATED AREA; LASER FLUENCES; LONG PULSE; N TYPE SILICON; NANOSECOND PULSE; Q-SWITCHED; QUASI-STEADY-STATE PHOTOCONDUCTANCE; SATURATION CURRENT; SILICON LATTICES; SILICON SUBSTRATES; SURFACE PASSIVATION; THERMAL DISSIPATION;

EID: 77749283747     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309382     Document Type: Article
Times cited : (13)

References (28)
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  • 18
    • 77749236843 scopus 로고    scopus 로고
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    • (2006)
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  • 19
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.