Optical properties of undoped, Be-doped, and Si-doped wurtzite-rich GaAs nanowires grown on Si substrates by molecular beam epitaxy

Solid State Communications

Volumn 150, Issue 15-16, 2010, Pages 729-733

  Ihn, Soo Ghang ^a   Ryu, Mee Yi ^b   Song, Jong In ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Kangwon National University   (South Korea)

Author keywords

A. Nanowire; C. Photoluminescence; C. X ray diffraction

Indexed keywords

A. NANOWIRE; BAND GAP ENERGY; BAND GAP NARROWING; BLUE SHIFT; C. X-RAY DIFFRACTION; GAAS; HEAVY DOPING; PL SPECTRA; SI SUBSTRATES; SI SURFACES; WURTZITES;

CRYSTAL GROWTH; DIFFRACTION; DOPING (ADDITIVES); ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON; X RAY DIFFRACTION; ZINC SULFIDE;

X RAY DIFFRACTION ANALYSIS;

EID: 77649340745     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.01.037     Document Type: Article

References (22)

1. Roest A.L., Verheijen M.A., Wunnicke O., Serafin S., Wondergem H., and Bakkers E.P.A.M. Nanotechnol. 17 (2006) S271
2. Ihn S.-G., Song J.-I., Kim Y.-H., and Lee J.Y. Appl. Phys. Lett. 89 (2006) 053106
3. Ihn S.-G., and Song J.-I. Nanotechnol. 18 (2007) 355603
4. Mårtensson T., Svensson C.P.T., Wacaser B.A., Larsson M.W., Seifert W., Deppert K., Gustafsson A., Wallenberg L.R., and Samuelson L. Nano Lett. 4 (2004) 1987
5. Ihn S.-G., Song J.-I., Kim Y.-H., Lee J.Y., and Ahn I.-H. IEEE Trans. Nanotechnol. 6 (2007) 384
6. Himura K., Yazawa M., Katsuyama T., Ogawa K., Haraguchi K., Koguchi M., and Kakibayashi H. J. Appl. Phys. 77 (1995) 447
7. Mattila M., Hakkarainen T., Mulot M., and Lipsanen H. Nanotechnol. 17 (2006) 1580
8. Martelli F., Piccin M., Bais G., Jabeen F., Ambrosini S., Rubini S., and Franciosi A. Nanotechnol. 18 (2007) 125603
9. Taraci J.L., Hÿtch M.J., Clement T., Peralta P., McCartney M.R., Drucker J., and Picraux S.T. Nanotechnol. 16 (2005) 2365
10. Gutiérrez H.R., Magalháes-Paniago R., Bortoleto J.R.R., and Cotta M.A. Appl. Phys. Lett. 85 (2004) 3581
11. Zhang J.-Y., and Yu W.W. Appl. Phys. Lett. 89 (2006) 123108
12. Glas F., Harmand J.-C., and Patriarche G. Phys. Rev. Lett. 99 (2007) 146101
13. Dheeraj D.L., Patriarche G., Zhou H., Hoang T.B., Moses A.F., Grønsberg S., van Helvoort A.T.J., Fimland B.-O., and Weman H. Nano Lett. 8 (2008) 4459
14. Spirkoska D., Arbiol J., Gustafsson A., Conesa-Boj S., Glas F., Zardo I., Heigoldt M., Gass M.H., Bleloch A.L., Estrade S., Kaniber M., Rossler J., Peiro F., Morante J.R., Samuelson L., Abstreiter G., and Fontcuberta i Morral A. Phys. Rev. B 80 (2009) 245325
15. Singh J. Physics of Semiconductors and their Heterostructures (1996), McGraw-Hill Book Co., Singapore p. 169
16. Varshni Y.P. Physica 34 (1967) 149
17. Thurmond C.D. J. Electrochem. Soc. 122 (1975) 1133
18. Murayama M., and Nakayama T. Phys. Rev. B 49 (1994) 4710
19. Chandramohan D., Balasubramanian S., and Tomak M. Phys. Rev. B 37 (1988) 7102
20. Hoang T.B., Moses A.F., Zhou H.L., Dheeraj D.L., Fimland B.O., and Weman H. Appl. Phys. Lett. 94 (2009) 133105
21. Borghs G., Bhattacharyya K., Deneffe K., Van Mieghem P., and Mertens R. J. Appl. Phys. 66 (1989) 4381
22. Lu Z.H., Hanna M.C., and Majerfeld A. Appl. Phys. Lett. 64 (1994) 88