Low temperature growth of aligned ZnO nanowires and their application as field emission cathodes

Materials Chemistry and Physics

Volumn 120, Issue 2-3, 2010, Pages 691-696

  Jamali Sheini, Farid ^a   Joag, Dilip S ^b   More, Mahendra A ^b   Singh, Jai ^c   Srivasatva, O N ^c  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b UNIVERSITY OF PUNE   (India)

^c BANARAS HINDU UNIVERSITY   (India)

Author keywords

Field emission; Nanowires

Indexed keywords

APPLIED FIELD; BINARY PHASIS; EMISSION CURRENT DENSITY; FIELD EMISSION CURRENTS; FIELD EMISSION PROPERTY; FIELD EMITTER; GROWTH MECHANISMS; HEXAGONAL WURTZITE STRUCTURE; HIGH CURRENT DENSITIES; LOW TEMPERATURE GROWTH; MICROSCOPIC ANALYSIS; NANOCRYSTALLINES; PREFERENTIAL GROWTH; SCANNING ELECTRON MICROSCOPE; SELECTED AREA ELECTRON DIFFRACTION ANALYSIS; TRANSMISSION ELECTRON MICROSCOPE; TURN-ON FIELD; ZNO; ZNO NANOWIRES; ZNO WIRES;

DIFFRACTION; ELECTRON MICROSCOPES; FIELD EMISSION; GOLD COATINGS; HOLOGRAPHIC INTERFEROMETRY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

FIELD EMISSION CATHODES;

EID: 77649235830     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.12.022     Document Type: Article

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