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Journal of Analytical Atomic Spectrometry

Volumn 25, Issue 3, 2010, Pages 370-377

Pulsed radiofrequency glow discharge optical emission spectrometry for the direct characterisation of photovoltaic thin film silicon solar cells

(5) Sánchez, Pascal a,b Fernández, Beatriz a Menéndez, Armando b Pereiro, Rosario a Sanz Medel, Alfredo a

a UNIVERSITY OF OVIEDO (Spain)

b Parque Tecnológico de Asturias (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; BACK CONTACT; CHARACTERISATION; COATING LAYER; CONTACT LAYERS; CONTINUOUS MODE; DEPTH RESOLUTION; DEPTH-PROFILING ANALYSIS; DIFFUSION PROCESS; DOPED FILMS; DUTY CYCLES; EMISSION YIELDS; EXPERIMENTAL CONDITIONS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); IN-DEPTH PROFILE; INTENSITY SIGNAL; OPTIMISATIONS; OPTIMUM CONDITIONS; PENETRATION RATES; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC THIN FILMS; PLASMA CLEANING; PULSE FREQUENCIES; RADIOFREQUENCY GLOW DISCHARGES; RF-GD-OES; SIGNAL INTENSITIES; SUPPLY SHORTAGES; THIN FILM SOLAR CELLS; THIN-FILM TECHNOLOGY; ZNO;

AMORPHOUS FILMS; COMPETITION; DEPTH PROFILING; DIFFUSION COATINGS; GLOW DISCHARGES; LIGHT EMISSION; OPTICAL EMISSION SPECTROSCOPY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; SOLAR POWER GENERATION; SPECTROMETRY; THIN FILM DEVICES; THIN FILMS; ZINC; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 77649223001 PISSN: 02679477 EISSN: 13645544 Source Type: Journal
DOI: 10.1039/b923884k Document Type: Article

Times cited : (22)

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