The effect of sputtering pressure on electrical, optical and structure properties of indium tin oxide on glass

Thin Solid Films

Volumn 518, Issue 12, 2010, Pages 3326-3331

  Elhalawaty, S ^a   Sivaramakrishnan, K ^a   Theodore, N D ^b   Alford, T L ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Deposition pressure; Indium tin oxide; Sn defects; Sputtering

Indexed keywords

DEFECT CLUSTERING; DEPOSITION PRESSURES; ELECTRICAL PROPERTY; FILM STRUCTURE; FOUR-POINT PROBE MEASUREMENTS; GLASS SUBSTRATES; INDIUM TIN OXIDE; ITO FILMS; LOW PRESSURES; REDUCING ATMOSPHERE; RF-MAGNETRON SPUTTERING; SN DEFECTS; SPUTTER PRESSURE; SPUTTERING PRESSURES; STRUCTURE PROPERTY; THIN LAYERS; X RAY DIFFRACTOMETRY;

DEFECTS; ELECTRIC PROPERTIES; HALL EFFECT; INDIUM; ITO GLASS; MAGNETIC FIELD EFFECTS; MAGNETRON SPUTTERING; MEASUREMENTS; OPTICAL PROPERTIES; PHOTOLITHOGRAPHY; PRESSURE EFFECTS; TIN; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77649212546     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.014     Document Type: Article

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