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The dielectric constant of STO near the interface region is reported to exhibit the bias dependence, For example, see Ref. 1 If this dependence is taken into consideration, the dielectric constant decreases with bias voltage. Therefore the dielectric constant of 300 might overestimate the depletion layer width and makes the difference in capacitance between LRS and HRS larger than the value estimated by considering the bias dependence into account
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The dielectric constant of STO near the interface region is reported to exhibit the bias dependence. (For example, see Ref. 1) If this dependence is taken into consideration, the dielectric constant decreases with bias voltage. Therefore the dielectric constant of 300 might overestimate the depletion layer width and makes the difference in capacitance between LRS and HRS larger than the value estimated by considering the bias dependence into account.
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