Epitaxial diodes of a half-metallic ferromagnet on an oxide semiconductor

Journal of Applied Physics

Volumn 95, Issue 11 II, 2004, Pages 7324-7326

  Postma, F M ^a   Ramaneti, R ^a   Banerjee, T ^a   Gokcan, H ^a   Haq, E ^a   Blank, D H A ^a   Jansen, R ^a   Lodder, J C ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON TUNNELING; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; LANTHANUM COMPOUNDS; MAGNETIC LEAKAGE; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; THIN FILMS; TITANIUM DIOXIDE;

FERROMAGNETS; IDEALITY FACTOR; SPIN POLARIZATION; SURFACE TERMINATION;

SCHOTTKY BARRIER DIODES;

EID: 2942637754     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1669255     Document Type: Conference Paper

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