-
1
-
-
0033173921
-
Progress towards Ultra-Wideband AlGaN/GaN MMICs
-
Zolper, J.C., Progress towards Ultra-Wideband AlGaN/GaN MMICs, Solid State Electron., 1999, vol. 43, no. 8, pp. 1479-1482.
-
(1999)
Solid State Electron.
, vol.43
, Issue.8
, pp. 1479-1482
-
-
Zolper, J.C.1
-
2
-
-
0028385147
-
Candella-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting Diodes
-
Nakamura, S., Muka, T., and Senoh, M., Candella-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting Diodes, Appl. Phys. Lett., 1994, vol. 64, no. 13, pp. 1687-1691.
-
(1994)
Appl. Phys. Lett.
, vol.64
, Issue.13
, pp. 1687-1691
-
-
Nakamura, S.1
Muka, T.2
Senoh, M.3
-
3
-
-
0040189083
-
Structural Properties of GaN Grown on SiC Substrates by Hydride Vapor Phase Epitaxy
-
Melnik, Yu.A., Nikitina, I.P., Nikolaev, A.E., and Dmitriev, V.A., Structural Properties of GaN Grown on SiC Substrates by Hydride Vapor Phase Epitaxy, Diamond Relat. Mater., 1997, vol. 6, no. 10, pp. 1532-1535.
-
(1997)
Diamond Relat. Mater.
, vol.6
, Issue.10
, pp. 1532-1535
-
-
Melnik, Yu.A.1
Nikitina, I.P.2
Nikolaev, A.E.3
Dmitriev, V.A.4
-
4
-
-
0031150308
-
Growth of Gallium Nitride by Hydride Vapor-Phase Epitaxy
-
Molnar, R.J., Gotz, W., Romano, L.T., and Johnson, N.M., Growth of Gallium Nitride by Hydride Vapor-Phase Epitaxy, J. Cryst. Growth, 1997, vol. 178, no. 1/2, pp. 147-156.
-
(1997)
J. Cryst. Growth
, vol.178
, Issue.1-2
, pp. 147-156
-
-
Molnar, R.J.1
Gotz, W.2
Romano, L.T.3
Johnson, N.M.4
-
5
-
-
0038481256
-
Thick GaN Layers Grown by Hydride Vapor-Phase Epitaxy: Hetero- Versus Homo-Epitaxy
-
Hageman, P.R., Kirilyuk, V., Corbeek, W.H.M., et al., Thick GaN Layers Grown by Hydride Vapor-Phase Epitaxy: Hetero- Versus Homo-Epitaxy, J. Cryst. Growth, 2003, vol. 255, no. 3/4, pp. 241-249.
-
(2003)
J. Cryst. Growth
, vol.255
, Issue.3-4
, pp. 241-249
-
-
Hageman, P.R.1
Kirilyuk, V.2
Corbeek, W.H.M.3
-
6
-
-
0037121705
-
Growth and Characterization of Low Defect GaN by Hydride Vapor Phase Epitaxy
-
Xu, X., Vaudo, R.P., Loria, C., et al., Growth and Characterization of Low Defect GaN by Hydride Vapor Phase Epitaxy, J. Cryst. Growth, 2002, vol. 246, no. 3/4, pp. 223-229.
-
(2002)
J. Cryst. Growth
, vol.246
, Issue.3-4
, pp. 223-229
-
-
Xu, X.1
Vaudo, R.P.2
Loria, C.3
-
7
-
-
0000601114
-
Structural and Chemical Characterization of Free-Standing GaN Films Separated from Sapphire Substrates by Laser Lift-Off
-
Stach, E.A., Kelsch, M., Nelson, C., et al., Structural and Chemical Characterization of Free-Standing GaN Films Separated from Sapphire Substrates by Laser Lift-Off, Appl. Phys. Lett., 2000, vol. 77, no. 12, pp. 1819-1821.
-
(2000)
Appl. Phys. Lett.
, vol.77
, Issue.12
, pp. 1819-1821
-
-
Stach, E.A.1
Kelsch, M.2
Nelson, C.3
-
8
-
-
0037121730
-
Growth and Separation Related Properties of HVPE-GaN Free-Standing Films
-
Paskova, T., Darakchieva, V., Paskov, P.P., et al., Growth and Separation Related Properties of HVPE-GaN Free-Standing Films, J. Cryst. Growth, 2002, vol. 246, no. 3/4, pp. 207-214.
-
(2002)
J. Cryst. Growth
, vol.246
, Issue.3-4
, pp. 207-214
-
-
Paskova, T.1
Darakchieva, V.2
Paskov, P.P.3
-
9
-
-
0242523148
-
On the Chloride Vapor-Phase Epitaxy Growth of GaN and Its Characterization
-
Varadarajan, E., Puviarasu, P., Kumar, J., and Dhanasekaran, R., On the Chloride Vapor-Phase Epitaxy Growth of GaN and Its Characterization, J. Cryst. Growth, 2004, vol. 260, no. 1/2, pp. 43-49.
-
(2004)
J. Cryst. Growth
, vol.260
, Issue.1-2
, pp. 43-49
-
-
Varadarajan, E.1
Puviarasu, P.2
Kumar, J.3
Dhanasekaran, R.4
-
10
-
-
0032092390
-
Low-Pressure Chemical Vapor Deposition of GaN Epitaxial Films
-
Topf, M., Steude, G., Fischer, S., et al., Low-Pressure Chemical Vapor Deposition of GaN Epitaxial Films, J. Cryst. Growth, 1998, vol. 189/190, no. 3/4, pp. 330-334.
-
(1998)
J. Cryst. Growth
, vol.189-190
, Issue.3-4
, pp. 330-334
-
-
Topf, M.1
Steude, G.2
Fischer, S.3
-
11
-
-
2542518312
-
Halogenation of Metals Using Ammonium Salts: Synthesis of High-Purity Trihaloamminegallium Complexes
-
Red'kin, A.N., Smirnov, V.A., Tatsii, V.I., and Sokolova, E.A., Halogenation of Metals Using Ammonium Salts: Synthesis of High-Purity Trihaloamminegallium Complexes, Vysokochist. Veshchestva, 1991, no. 3, pp. 108-114.
-
(1991)
Vysokochist. Veshchestva
, Issue.3
, pp. 108-114
-
-
Red'kin, A.N.1
Smirnov, V.A.2
Tatsii, V.I.3
Sokolova, E.A.4
-
12
-
-
7744243807
-
3 Pyrolysis
-
S.-Peterburg
-
3 Pyrolysis, Zh. Prikl. Khim. (S.-Peterburg), 1994, vol. 67, no. 5, pp. 742-747.
-
(1994)
Zh. Prikl. Khim.
, vol.67
, Issue.5
, pp. 742-747
-
-
Aleksandrov, S.E.1
Kovalgin, A.Yu.2
Krasovitskii, D.M.3
-
13
-
-
7744220768
-
Effect of Ammonia Additions on Trichloroamminegallium Pyrolysis Studied by UV Spectroscopy
-
S.-Peterburg
-
Aleksandrov, S.E., Kovalgin, A.Yu., and Krasovitskii, D.M., Effect of Ammonia Additions on Trichloroamminegallium Pyrolysis Studied by UV Spectroscopy, Zh. Prikl. Khim. (S.-Peterburg), 1995, vol. 68, no. 1, pp. 9-13.
-
(1995)
Zh. Prikl. Khim.
, vol.68
, Issue.1
, pp. 9-13
-
-
Aleksandrov, S.E.1
Kovalgin, A.Yu.2
Krasovitskii, D.M.3
-
14
-
-
0242691937
-
2 Carrier Gas
-
2 Carrier Gas, J. Cryst. Growth, 2004, vol. 260, no. 1/2, pp. 79-84.
-
(2004)
J. Cryst. Growth
, vol.260
, Issue.1-2
, pp. 79-84
-
-
Liu, H.-P.1
Tsay, J.-D.2
Liu, W.-Y.3
-
15
-
-
0345996551
-
Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films
-
Gruzintsev, A.N., Kaiser, U., Rhodos, I.I., and Richter, W., Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films, Neorg. Mater., 2001, vol. 37, no. 6, pp. 704-707 [Inorg. Mater. (Engl. Transl.), vol. 37, no. 6, pp. 591-594].
-
(2001)
Neorg. Mater.
, vol.37
, Issue.6
, pp. 704-707
-
-
Gruzintsev, A.N.1
Kaiser, U.2
Rhodos, I.I.3
Richter, W.4
-
16
-
-
0345996551
-
-
Engl. Transl.
-
Gruzintsev, A.N., Kaiser, U., Rhodos, I.I., and Richter, W., Fine Structure of the Blue Photoluminescence in High-Purity Hexagonal GaN Films, Neorg. Mater., 2001, vol. 37, no. 6, pp. 704-707 [Inorg. Mater. (Engl. Transl.), vol. 37, no. 6, pp. 591-594].
-
Inorg. Mater.
, vol.37
, Issue.6
, pp. 591-594
-
-
-
17
-
-
0033813857
-
Substrate Effects on the Structure and Optical Properties of GaN Epitaxial Films
-
Kaiser, U., Gruzintsev, A.N., Khodos, I.I., and Richter, W., Substrate Effects on the Structure and Optical Properties of GaN Epitaxial Films, Neorg. Mater., 2000, vol. 36, no. 6, pp. 720-724 [Inorg. Mater. (Engl. Transl.), vol. 36, no. 6, pp. 595-598].
-
(2000)
Neorg. Mater.
, vol.36
, Issue.6
, pp. 720-724
-
-
Kaiser, U.1
Gruzintsev, A.N.2
Khodos, I.I.3
Richter, W.4
-
18
-
-
0033813857
-
-
Engl. Transl.
-
Kaiser, U., Gruzintsev, A.N., Khodos, I.I., and Richter, W., Substrate Effects on the Structure and Optical Properties of GaN Epitaxial Films, Neorg. Mater., 2000, vol. 36, no. 6, pp. 720-724 [Inorg. Mater. (Engl. Transl.), vol. 36, no. 6, pp. 595-598].
-
Inorg. Mater.
, vol.36
, Issue.6
, pp. 595-598
-
-
|