The rate-limiting step in the thermal oxidation of silicon carbide

Scripta Materialia

Volumn 62, Issue 9, 2010, Pages 654-657

  Wang, Junjie ^a   Zhang, Litong ^a   Zeng, Qingfeng ^a   Vignoles, Gérard L ^b   Cheng, Laifei ^a   Guette, Alain ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

CO; Deal Grove model; Diffusion; SiC oxidation

Indexed keywords

ACTIVATION ENERGY; CALCULATIONS; COBALT; DIFFUSION; SILICA; SILICON CARBIDE; THERMOOXIDATION;

CONTROLLING STEPS; DEAL-GROVE MODEL; DIFFUSION ACTIVATION ENERGY; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; RATE-LIMITING STEPS; SYSTEMATIC STUDY; THERMAL OXIDATION; THERMAL OXIDATION PROCESS;

SILICON OXIDES;

EID: 77049124217     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2010.01.017     Document Type: Article

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