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Volumn 27, Issue 2, 2010, Pages
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Effects of substitution of Sm for Bi in BiFeO3 thin films prepared by the sol-gel method
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Author keywords
[No Author keywords available]
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Indexed keywords
BISMUTH COMPOUNDS;
ELECTRIC FIELDS;
FILM PREPARATION;
LEAKAGE CURRENTS;
POLARIZATION;
SAMARIUM;
SAMARIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SOL-GEL PROCESS;
SOL-GELS;
THIN FILMS;
X RAY DIFFRACTION;
BIFEO 3 THIN FILMS;
DENSE SURFACE;
DOPING LEVELS;
EFFECT OF SUBSTITUTION;
LEAKAGE CURRENT DENSITYS;
RANDOM ORIENTATIONS;
REMNANT POLARIZATIONS;
SM SUBSTITUTION;
SOL- GEL METHODS;
X RAY DIFFRACTION PATTERNS;
IRON COMPOUNDS;
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EID: 77049112751
PISSN: 0256307X
EISSN: 17413540
Source Type: Journal
DOI: 10.1088/0256-307X/27/2/027704 Document Type: Article |
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Times cited : (5)
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References (24)
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