Highly-oriented PVD ruthenium liner for low-resistance direct-plated Cu interconnects

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 4-6

  Abe, M ^a   Ueki, M ^a   Tada, M ^a   Onodera, T ^a   Furutake, N ^a   Shimura, K ^a   Saito, S ^a   Hayashi, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; PHYSICAL VAPOR DEPOSITION; RUTHENIUM COMPOUNDS; THIN FILMS;

INTERFACE SCATTERING; ORIENTATION CONTROL; PVD-RU/TAN LINERS; ULSI INTERCONNECTS;

OPTICAL INTERCONNECTS;

EID: 34748902456     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382331     Document Type: Conference Paper

References (6)

1. S. Im, et al, et.al., IEEE Trans. Electron Devices, 52, 12, p.2710, 2005.
2. R.Sarvari, et.al., IITC 2005, p.197.
3. W. Steinhoegl, et.al., SISPAD 2003, p.27.
4. M. Tada, et al., VLSI Symp. 2005, p.18.
5. C-C. Yang, et.al., IITC 2006, p.187.
6. H. Kim et al., J. Electrochem. Soc., 157, G594, 2005.