Mid-frequency deposition of a-C:H films using five different precursors

Vacuum

Volumn 84, Issue 7, 2010, Pages 958-961

  Peter, S ^a   Gunther M ^a   Hauschild, D ^a   Grambole, D ^b   Richter, F ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

a C:H; Diamond like carbon; PECVD; Precursor; Pulsed discharge

Indexed keywords

A-C:H FILMS; AMORPHOUS HYDROGENATED CARBON FILMS; CHEMICAL VAPOUR DEPOSITION; CYCLOHEPTATRIENES; CYCLOPENTENES; DIAMOND-LIKE CARBON; DIFFERENT PRECURSORS; HYDROGEN CONCENTRATION; HYDROGEN CONTENTS; INVERSE PROPORTIONS; MID-FREQUENCY; PARALLEL PLATES; PULSED DISCHARGE; SUBSTRATE TEMPERATURE; WAVE FORMS;

ACETYLENE; AMORPHOUS CARBON; AMORPHOUS FILMS; BUTENES; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DEPOSITION RATES; FILM GROWTH; HARDNESS; LIGHTING; PLASMA DEPOSITION; TOLUENE;

CARBON FILMS;

EID: 76849111464     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.01.023     Document Type: Article

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