The Au/Si bonding interface studied by infrared microscope

Materials Letters

Volumn 64, Issue 7, 2010, Pages 827-829

  Jing, Errong ^a,b   Xiong, Bin ^a   Wang, Yuelin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Au Si bonding interface; Characterization methods; IR microscope; Microstructure

Indexed keywords

BLACK SPOT; BONDING CONDITIONS; BONDING INTERFACES; CHARACTERIZATION METHODS; DISSOLUTION BEHAVIOR; EUTECTIC BONDING; INFRARED MICROSCOPE; IR IMAGES; IR MICROSCOPE; SI (1 1 1); SI(1 0 0); SI(100) SURFACE;

ANISOTROPY; DISSOLUTION; MICROSTRUCTURE; SILICON; THREE DIMENSIONAL;

MICROSCOPES;

EID: 76849085993     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.01.027     Document Type: Article

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