Characterization of MONOS nonvolatile memory by solid phase crystallization on glass

Surface and Coatings Technology

Volumn 202, Issue 22-23, 2008, Pages 5637-5640

  Jin, Zhenghai ^a   Jung, Sungwook ^a   Van Duy, Nguyen ^a   Hwang, Sunghyun ^a   Jang, Kyungsoo ^a   Lee, Kwangsoo ^a   Lee, Jungin ^a   Hyungjun, Park ^a   Kim, Jaehon ^a   Son, Hyukjoo ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Nonvolatile memory; Retention; SPC poly silicon; Threshold voltage; Wide of window

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; ERROR ANALYSIS; GLASS; NANOCRYSTALLINE ALLOYS; NITRIDES; POLYSILICON; SEMICONDUCTOR STORAGE; SILICON; SILICON COMPOUNDS; STATISTICAL PROCESS CONTROL;

NONVOLATILE MEMORY; RETENTION; SPC POLY-SILICON; THRESHOLD VOLTAGE; WIDE OF WINDOW;

DATA STORAGE EQUIPMENT;

EID: 50349090727     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2008.06.090     Document Type: Article

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