Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2728-2732

  Koo, Hyun Mo ^a   Cho, Won Ju ^a   Lee, Dong Uk ^b   Kim, Seon Pil ^b   Kim, Eun Kyu ^b   Jung, Jongwan ^c  

^a Kwangwoon University   (South Korea)

^b Hanyang University   (South Korea)

^c Sejong University   (South Korea)

Author keywords

Excimer laser annealing; In2O3 metal nano dots; Low temperature poly Si TFT; Nonvolatile memory; Polyimide gate insulator

Indexed keywords

ANNEALING; DIGITAL ARITHMETIC; DIGITAL DEVICES; DISPLAY DEVICES; EXCIMER LASERS; GAS LASERS; GLASS; HYDROGEN; INSULATION; INTEGRATION; LIQUID CRYSTAL DISPLAYS; POLYIMIDES; POLYMERS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS;

APPLICATIONS.; CHARGE STORAGES; CRYSTAL DISPLAYS; DIGITAL MEMORIES; EXCIMER LASER ANNEALING; FLOATING GATE MEMORIES; IN2O3 METAL NANO-DOTS; INSULATING LAYERS; INTEGRATION TECHNOLOGIES; LOW TEMPERATURE POLY-SI TFT; LOW TEMPERATURES; MEMORY WINDOWS; NONVOLATILE MEMORIES; NONVOLATILE MEMORY; NONVOLATILE MEMORY DEVICES; POLYCRYSTALLINE SILICONS; TFT-LCD;

DATA STORAGE EQUIPMENT;

EID: 54249092441     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2728     Document Type: Article

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