Band anticrossing in GaN xSb 1-x

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Jefferson, P H ^a   Veal, T D ^a   Piper, L F J ^a   Bennett, B R ^a,d   McConville, C F ^a   Murdin, B N ^b   Buckle, L ^c   Smith, G W ^c   Ashley, T ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c QINETIQ   (United Kingdom)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ANTICROSSING FITTING; NITROGEN INCORPORATION; VALENCE BAND;

ABSORPTION; BAND STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAMILTONIANS; NITROGEN; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

GALLIUM NITRIDE;

EID: 33748705391     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349832     Document Type: Article

References (18)

1. Dilute Nitride Semiconductors, edited by M. Henini (Elsevier, New York, 2005).
2. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999).
3. J. N. Baillargeon, P. J. Pearah, K. Y. Cheng, G. E. Hofler, and K. C. Hsieh, J. Vac. Sci. Technol. B 10, 829 (1992).
4. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys., Part 2 31, L853 (1992).
5. T. D. Veal, L. F. J. Piper, P. H. Jefferson, I. Mahboob, C. F. McConville, M. Merrick, T. J. C. Hosea, B. N. Murdin, and M. Hopkinson, Appl. Phys. Lett. 87, 182114 (2005).
6. D. Veal, L. F. J. Piper, S. Jollands, B. R. Bennett, P. H. Jefferson, P. A. Thomas, C. F. McConville, B. N. Murdin, L. Buckle, G. W. Smith, and T. Ashley, Appl. Phys. Lett. 87, 132101 (2005).
7. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, Jr., M.-J. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, J. Appl. Phys. 97, 113510 (2005).
8. J.-C. Harmand, A. Caliman, E. V. K. Rao, L. Largeau, J. Ramos, R. Teissier, L. Travers, G. Ungaro, B. Theys, and I. F. L. Dias, Semicond. Sci. Technol. 17, 778 (2002).
9. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
10. L. Buckle, B. R. Bennett, S. Jollands, T. D. Veal, N. R. Wilson, B. N. Murdin, C. F. McConville, and T. Ashley, J. Cryst. Growth 278, 188 (2005).
11. P. Perlin, P. Wisniewski, C. Skierbiszewski, Y. Suski, E. Kaminska, S. G. Subramanya, E. R. Weber, D. E. Mars, and W. Walukiewicz, Appl. Phys. Lett. 76, 1279 (2000).
12. C. R. Pidgeon and R. N. Brown, Phys. Rev. 146, 575 (1966).
13. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
14. P. S. Dutta, H. L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997).
15. S. C. Jain, J. M. McGregor, and D. J. Roulston, J. Appl. Phys. 68, 3747 (1990).
16. J. I. Pankove, Phys. Rev. 140, A2059 (1965).
17. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971).
18. A. Lindsay and E. P. O'Reilly (private communication), GaNSb band parameters for five-band k·p, model from tight-binding calculations.