GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 255, Issue 1-2, 2003, Pages 52-56

  Chen, D J ^a   Shen, B ^a   Bi, Z X ^a   Zhang, K X ^a   Gu, S L ^a   Zhang, R ^a   Shi, Y ^a   Zheng, Y D ^a   Sun, X H ^b   Wan, S K ^b   Wang, Z G ^b  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION EFFECTS; DECOMPOSITION; ENERGY GAP; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; PHOTOLUMINESCENCE;

LIGHT-EMITTING DEVICES;

TERNARY SYSTEMS;

EID: 0038040583     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01200-4     Document Type: Article

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