SCOPUS 정보 검색 플랫폼

Volumn 237-239, Issue 1-4 II, 2002, Pages 1037-1041

Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition

(3) Yoshida, Seikoh a Kikawa, Junjiroh a Itoh, Yoshiteru a

Author keywords

A1. Characterization; A1. Crystal structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

ELECTROLUMINESCENCE; GAS LASERS; HIGH TEMPERATURE EFFECTS; LASER BEAM EFFECTS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BAND-EDGE EMISSION;

CRYSTAL GROWTH;

EID: 0036530484 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02123-6 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.