Schottky barrier height and conduction mechanisms in ferroelectric bismuth titanate

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Liu, Fen ^a   Ma, Ying ^a   Yang, Feng ^a   Zhou, Yichun ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH TITANATE; BISMUTH TITANATE FILMS; BULK-LIMITED CONDUCTIONS; CONDUCTION MECHANISM; EXPERIMENTAL DATA; FIRST-PRINCIPLES; METAL-INDUCED GAP STATE; PROCESSING CONDITION; PT ELECTRODE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY EFFECT;

DENSITY FUNCTIONAL THEORY; FERROELECTRICITY; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES;

BISMUTH;

EID: 76449109166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298645     Document Type: Article

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