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Volumn 189-190, Issue , 1998, Pages 566-569

High-concentration hydrogen in unintentionally doped GaN

Author keywords

Autodoping; Gallium nitride; Gas source molecular beam epitaxy; Hydrogen

Indexed keywords

ELECTRONS; HYDROGEN; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092388 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00199-7 Document Type: Article

Times cited : (7)

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