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Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 93-96

The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy

(6) Zhang, Jian Ping a Sun, Dian Zhao a Li, Xiao Bing a Wang, Xiao Liang a Fu, Rong Hui a Kong, Mei Ying a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

2DEG; GaN; MBE; MD heterostructure; Photoluminescence

Indexed keywords

AMMONIA; COMPOSITION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON GAS; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

GALLIUM NITRIDE; HALL MEASUREMENT;

MOLECULAR BEAM EPITAXY;

EID: 0032475027 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00406-0 Document Type: Article

Times cited : (4)

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