Carrier diffusion in InAs/GaAs quantum dot layers and its impact on light emission from etched microstructures

Nanotechnology

Volumn 14, Issue 6, 2003, Pages 571-577

  Shaw, A ^a   Folliot, H ^a   Donegan, J F ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; ETCHING; LIGHT EMISSION; MICROSTRUCTURE; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER DIFFUSION; CARRIER TRAPPING; INDIUM ARSENIDE; MICRO -PHOTOLUMINESCENCE TECHNIQUES; NONRADIATIVE EDGE RECOMBINATION; PHOTONIC BANDGAP STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037529334     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/6/301     Document Type: Article

References (23)

1. Kim J K, Strand T A, Naone R L and Coldren L A 1999 Appl. Phys. Lett. 74 2752
2. Chen H, Zou Z, Cao C and Deppe D G 2002 Appl. Phys. Lett. 80 350
3. Arzberger M, Böhm G, Amann M-C and Abstreiter G 2001 Appl. Phys. Lett. 79 1766
4. Benisty H, Weisbuch C, Labilloy D, Rattier M, Smith C J M, Krauss T F, De La Rue R M, Houdré R, Oesterle U, Jouanin C and Cassagne D 1999 IEEE J. Lightwave Technol. 17 2063
5. Kim J K, Naone R L and Coldren L A 2000 IEEE J. Sel. Top. Quantum Electron. 6 504
6. Brusaferri L, Sanguinetti S, Grilli E, Guzzi M, Bignazzi A, Bogani F, Carraresi L, Colocci M, Bosacchi A, Frigeri P and Franchi S 1996 Appl. Phys. Lett. 69 3354
7. Tang Y, Rich D H, Mukhametzhanov I, Chen P and Mudhuker A 1998 J. Appl. Phys. 84, 3342
8. Grassi Alessi M, Capizzi M, Bhatti A S and Frova A 1999 Phys. Rev. B 59 7620
9. Smith C J M, Benisty H, Labilloy D, Oesterle U, Houdré R, Krauss T F, De La Rue R M and Weisbuch C 1998 Electron. Lett. 35, 228
10. Bimberg D, Grundmann M and Ledentsov N N 1999 Quantum Dot Heterostructures (Chichester: Wiley) p 252
11. Krauss T F, Smith C J M, Vogele B, Murad S K, Wilkinson C D W, Grant R S, Burt M G and De La Rue R M 1997 Microelectron. Eng. 35 29
12. Casey H C Jr, Miller B I and Pinkas E 1973 J. Appl. Phys. 44 1281
13. van Ordorp C, Peters R C and Klerk M 1974 Appl. Phys. Lett. 24 125
14. Zarem H A, Sercel P C, Lebens J A, Eng L E, Yariv A and Vahala K J 1989 Appl. Phys. Lett. 55 1647
15. Hillmer H, Forchel A, Hansmann S, Morohashi M, Lopez E, Meier H P and Ploog K 1989 Phys. Rev. B 39 10901
16. Hwang C J 1969 J. Appl. Phys. 40 3731
17. Olsson A, Erskine D J, Xu Z Y, Schremer A and Tang C L 1982 Appl. Phys. Lett. 41 659
18. Kissel H, Muller U, Walther C, Masselink W T, Mazur Y I, Tarasov G G and Lisitsa M P 2000 Phys. Rev. B 62 7213
19. Heitz R, Mukhametzhanov I, Madhukar A, Hoffmann A and Bimberg D 1999 J. Electron. Mater. 28 520
20. Steer M J, Mowbray D J, Tribe W R, Skolnick M S, Sturge M D, Hopkinson M, Cullis A G, Whitehouse C R and Murray R 1996 Phys. Rev. B 54 17738
21. Lee U H, Yim J S, Lee D, Lee H G, Noh S K, Leem J Y and Lee H J 2000 J. Korean Phys. Soc. 37 593
22. Tarasov G G, Mazur Y I, Zhuchenko Z Y, Maaßdorf A, Nickel D, Tomm J W, Kissel H, Walther C and Masselink M T 2000 J. Appl. Phys. 88 7162
23. Lee H, Lowe-Webb R, Johnson T J, Yang W and Sercel P C 1998 Appl. Phys. Lett. 73 3556