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Journal of the Electrochemical Society

Volumn 157, Issue 3, 2010, Pages

Study of polishing characteristics of monodisperse ceria abrasive in chemical mechanical planarization

(3) Yang, Ji Chul a,b Kim, Ho Joong a Kim, Taesung a

a Sungkyunkwan University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVE PARTICLES; CERIA PARTICLES; CHEMICAL MECHANICAL PLANARIZATIONS; CONTACT AREA RATIO; CRYSTALLOGRAPHIC STRUCTURE; HIGH ASPECT RATIO; MONODISPERSE; PATTERNED WAFERS; POLISHING MECHANISM; SHALLOW TRENCH ISOLATION; SIZE EFFECTS; SUB-SURFACE DAMAGE; SURFACE INSPECTION SYSTEM;

ABRASIVES; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; CRYSTAL ATOMIC STRUCTURE; POLISHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE ROUGHNESS; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; CHEMICAL POLISHING; PARTICLE SIZE;

CHEMICAL POLISHING; CHEMICAL MECHANICAL POLISHING;

EID: 76349104863 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3273079 Document Type: Article

Times cited : (27)

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