Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation-chemical-mechanical polishing (STI-CMP) process

Microelectronic Engineering

Volumn 60, Issue 3-4, 2002, Pages 357-364

  Kim, Sang Yong ^a   Seo, Yong Jin ^b  

^a FAB Division   (South Korea)

^b Daebul University   (South Korea)

Author keywords

Blanket (non pattern); Chemical mechanical polishing (CMP); Correlation factor; Shallow trench isolation (STI)

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CORRELATION METHODS; PLASMA APPLICATIONS; SILICATES;

SHALLOW TRENCH ISOLATION (STI);

MICROELECTRONIC PROCESSING;

EID: 0036532411     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00694-3     Document Type: Article

References (8)

1. STI process steps for sub-quarter micron CMOS
2. Shallow trench isolation for sub-0.25 μm IC technologies
3. Study of chemical mechanical polishing on shallow trench isolation to obtain low defect
4. Manufacturability of the CMP process
5. Chemical-mechanical polishing of PECVD silicon nitride
6. Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
7. Pattern dependence and planarization using silica and ceria slurries for shallow trench
8. An optimization of tungsten plug chemical mechanical polishing (CMP) using different consumables