Long wavelength electrically pumped GaSb-based buried tunnel junction VCSELs

Physics Procedia

Volumn 3, Issue 2, 2010, Pages 1155-1159

  Bachmann, Alexander ^a   Arafin, Shamsul ^a   Kashani Shirazi, Kaveh ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

GaSb; Infrared; TDLAS; VCSEL

Indexed keywords

ABSORPTION LINES; AMBIENT TEMPERATURES; BURIED TUNNEL JUNCTION; CONTINUOUS WAVES; DBR; DEVICE STRUCTURES; ELECTRICALLY PUMPED; FREE-SPACE COMMUNICATION; GAINASSB; LONG WAVELENGTH; LONG WAVELENGTH LASERS; MAXIMUM OUTPUT POWER; MID-INFRARED SPECTRAL REGIONS; OPTICAL CONFINEMENT; QUANTUM WELL; SINGLE MODE EMISSION; SYSTEM-BASED; TRACE-GAS SENSING; TUNABLE DIODE LASER ABSORPTION SPECTROSCOPY; WAVELENGTH RANGES;

GALLIUM ALLOYS; GAS ABSORPTION; LIGHT; LIGHT SOURCES; MEDICAL APPLICATIONS; MILITARY APPLICATIONS; MILITARY COMMUNICATIONS; MILITARY ELECTRONIC COUNTERMEASURES; QUANTUM WELL LASERS; SENSORS; SURFACE EMITTING LASERS; TUNNEL JUNCTIONS; WIND TUNNELS;

ABSORPTION SPECTROSCOPY;

EID: 76249121403     PISSN: 18753884     EISSN: 18753892     Source Type: Conference Proceeding    
DOI: 10.1016/j.phpro.2010.01.155     Document Type: Article

References (8)

1. Ortsiefer M., et al. Electron. Lett. 42 (2006) 640-641
2. Weigl B., et al. IEEE J. Sel. Top. Quantum Electron. 3 (1997) 409-415
3. Schulz N., et al. Phys. Stat. Sol. (c) 3 (2006) 386-390
4. Cerutti L., et al. Electron. Lett. 40 (2004) 869-870
5. Ducanchez A., et al. IEEE Phot. Technol. Lett. 20 (2008) 1745-1747
6. Bachmann A., et al. IEEE 21st Semiconductor Laser Conf. (2008) 39-40
7. Dier O., et al. Electron. Lett. 42 (2006) 419-420
8. Chen J., et al. Conf. in Lasers and Electro-Optics (2009)