SCOPUS 정보 검색 플랫폼

Volumn 93, Issue 3, 2008, Pages

The effect of doping the M -barrier in very long-wave type-II InAsGaSb heterodiodes

(7) Hoffman, Darin a Nguyen, Binh Minh a Huang, Edward Kwei Wei a Delaunay, Pierre Yves a Razeghi, Manijeh a Tidrow, Meimei Z b Pellegrino, Joe c

a Northwestern University (United States)

b ARMED FORCES INSTITUTE OF PATHOLOGY (United States)

c NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MERCURY COMPOUNDS; PASSIVATION; STANDARDS;

AMERICAN INSTITUTE OF PHYSICS (AIP); CUT OFF WAVELENGTHS; DARK CURRENT DENSITY (DCD); DETECTIVITY; EFFECT OF DOPING; HETERODIODES; HGCDTE PHOTODIODES; LARGE AREA DIODES; OPTIMAL DOPING; REVERSE BIASES; SUPERLATTICE (SL); TYPE II SUPERLATTICE;

DARK CURRENTS;

EID: 48249114086 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2963980 Document Type: Article

Times cited : (42)

References (10)

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