Modeling laterally-contacted nipi-diode radioisotope batteries

IEEE Transactions on Nuclear Science

Volumn 55, Issue 3, 2008, Pages 1736-1743

  Cress, Cory D ^a,b   Landi, Brian J ^b   Raffaelle, Ryne P ^b  

^a IEEE

^b ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Displacement damage dose profile; InGaP photovoltaic; Micropower devices; NIEL; Radioisotope batteries; SRIM

Indexed keywords

NUCLEAR BATTERIES; NUCLEAR ENGINEERING; POWER GENERATION; RADIOACTIVE MATERIALS; RADIOISOTOPES;

DEVICE OPERATIONS; ENERGY DEPOSITED; EQUIVALENT CIRCUIT MODEL (ECM); EXPERIMENTAL MEASUREMENTS; LUMPED PARAMETERS; MODELING APPROACHES; MODELING RESULTS; OUTPUT VOLTAGES; PARTICLE ENERGIES; PARTICLE FLUXES; RADIOISOTOPE SOURCES;

DIODES;

EID: 45849121028     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.920263     Document Type: Conference Paper

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