New approach to remove crystal originated pits in Czochralski-grown silicon: Combination of germanium ion implantation with solid-phase epitaxy

Journal of Crystal Growth

Volumn 271, Issue 3-4, 2004, Pages 368-375

  Xiao, Qinghua ^a   Tu, Hailing ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

A2. Czochralski method; A3. Ion implantation; A3. Solid phase epitaxy; Al. Crystal originated pits; B2. Semiconducting silicon

Indexed keywords

ANNEALING; ION IMPLANTATION; LASER BEAM EFFECTS; LIGHT SCATTERING; RELAXATION PROCESSES; REMOVAL; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING PROCESSES; CRYSTAL-ORIGINATED PITS; IMPLANT DAMAGE; SOLID-PHASE EPITAXIAL GROWTH (SPEG);

CRYSTAL GROWTH FROM MELT;

EID: 7544241656     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.006     Document Type: Article

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