Silicon crystals for future requirements of 300 mm wafers

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 11-16

  Dornberger, E ^a   Virbulis, J ^a   Hanna, B ^a   Hoelzl, R ^a   Daub, E ^a   Von Ammon, W ^a  

^a SILTRONIC AG   (Germany)

Author keywords

A1. Defects; A1. Point defects; A2. Czochralski method; B2. Semiconducting silicon

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; POINT DEFECTS; SEMICONDUCTOR GROWTH;

GROWN-IN DEFECT FREE WAFERS;

SILICON WAFERS;

EID: 0035398931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01041-7     Document Type: Article

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