Re-examination of impact of intrinsic dopant fluctuations on static RAM (SRAM) static noise margin

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2147-2151

  Tachibana, Fumihiko ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Dopant fluctuation; Drain induced barrier lowering (dibl); Metal oxide semiconductor field effect transistor (mosfet); SRAM; Static noise margin (snm); Threshold voltage

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; MOS CAPACITORS; MOSFET DEVICES; PARAMETER ESTIMATION; PROBABILITY DENSITY FUNCTION; SCHEMATIC DIAGRAMS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

DOPANT FLUCTUATION; DRAIN-INDUCED BARRIER LOWERING (DIBL); METAL OXIDE FIELD EFFECT TRANSISTORS (MOSFET); STATIC NOISE MARGIN (SNM);

STATIC RANDOM ACCESS STORAGE;

EID: 21244465926     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2147     Document Type: Conference Paper

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