TEOS-PECVD system for high growth rate deposition of SiO2 films

Vacuum

Volumn 79, Issue 3-4, 2005, Pages 194-202

  Mahajan, A M ^a   Patil, L S ^a   Bange, J P ^a   Gautam, D K ^a  

^a NORTH MAHARASHTRA UNIVERSITY   (India)

Author keywords

Electrodes; Optoelectronics devices; PECVD system; Pumping system; Reaction chamber; RF power; TEOS

Indexed keywords

ELECTRODES; ELLIPSOMETRY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; SILICA;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) SYSTEMS; PUMPING SYSTEMS; REACTION CHAMBERS; RF POWER; TETRAETHOXYSILANE (TEOS);

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 22544470320     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.03.006     Document Type: Article

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