The effect of NH3 on the interface of HfO2 and Al2O3 films on GaAs (100) surfaces

ECS Transactions

Volumn 19, Issue 1, 2009, Pages 233-239

  Suh, Dong Chan ^a   Cho, Young Dae ^a   Ko, Dae Hong ^a   Chung, Kwun Bum ^b   Cho, Mann Ho ^a   Lee, Yongshik ^a  

^a Yonsei University   (South Korea)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; ALUMINUM OXIDE; AMMONIA; ATOMIC LAYER DEPOSITION; CAPACITANCE; CMOS INTEGRATED CIRCUITS; GALLIUM ARSENIDE; HAFNIUM OXIDES; HEAT TREATMENT; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; LOGIC GATES; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

AMBIENT CONDITIONS; ANNEALING TEMPERATURES; CAPACITANCE VOLTAGE; EFFECTS OF HEAT TREATMENT; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MONOCHROMATIC X-RAYS; NITRIDATION PROCESS; REACTION MECHANISM;

DIELECTRIC MATERIALS;

EID: 74949085201     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3118949     Document Type: Conference Paper

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16. nd edition