Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

ECS Transactions

Volumn 25, Issue 7, 2009, Pages 405-410

  Ya Lim, Phyllis Shi ^a   Chi, Dong Zhi ^b   Lo, Guo Qiang ^c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM;

CMOS COMPATIBLE; DIELECTRIC STACK; DOPANT SEGREGATION; GE-ON-SI SUBSTRATES; LOW PROCESS TEMPERATURE; METAL GATE; NICKEL GERMANIDE; P-MOSFETS;

MOSFET DEVICES;

EID: 74349099515     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3203977     Document Type: Conference Paper

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