Room-temperature deposition of group III metals on Si(1 0 0): A comparative study of nucleation behavior

Surface Science

Volumn 604, Issue 3-4, 2010, Pages 396-403

  Albao, Marvin A ^a   Hsu, Chia Hsiu ^b   Putungan, Darwin B ^a   Chuang, Feng Chuan ^b  

^a UNIVERSITY OF THE PHILIPPINES LOS BAÑOS   (Philippines)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Density functional theory calculations; Kinetic Monte Carlo simulation; Nanowires; Nucleation; Thin film growth

Indexed keywords

[A] GROWTH MODELS; ACTIVATION BARRIERS; ADATOM DIFFUSION; ADSORPTION ENERGIES; COMPARATIVE STUDIES; DENSITY FUNCTIONAL THEORY CALCULATIONS; DIFFUSION PATHWAYS; GROUP III; ISLAND DENSITY; KINETIC MONTE CARLO; KINETIC MONTE CARLO SIMULATION; METAL CHAIN; NUCLEATION BEHAVIOR; RELATIVE STABILITIES; ROOM TEMPERATURE; ROOM TEMPERATURE DEPOSITION; SI(1 0 0);

ADATOMS; ADSORPTION; BINDING ENERGY; BINDING SITES; BIOCHEMISTRY; COMPUTER SIMULATION; DEFECT DENSITY; DEFECTS; DENSITY FUNCTIONAL THEORY; GALLIUM; LITHIUM COMPOUNDS; MONTE CARLO METHODS; NANOWIRES; NUCLEATION; RADIATION DAMAGE; SILICON; THIN FILM DEVICES; THIN FILMS;

FILM GROWTH;

EID: 74049150754     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.11.036     Document Type: Article

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